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Dual-Channel LNA+Switch FEM

GaAs Chip

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Frequency：2-5GHzHigh intergration:2 Stage LNA+SwitchHigh Gain:20-38dbHigh isolation Low IL: 0.4-1.1dBLow NF:1.2dBHigh OIP3: 45dbmHigh power handling Package: LGA 6*6mm
MMMB Power Amplifier Module (PAM)

GaAs Chip

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Multiband 3G/LTE handsetsOne T/R (RX) ports and 6 outputsIndustry-leading PAEOptimized for APT DCDC operationFully programmable MIPI controlMIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4GSmall, low profile package LGA 4*6.8mm
MMMB Power Amplifier Module (PAM)

GaAs Chip

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Multiband 3G/LTE handsetsIndustry-leading PAEOptimized for APT DCDC operationFully programmable MIPI controlMIPI programmable bias modes optimize best efficiency / linearity trade-off for 3G and 4GSmall, low profile package LGA 4*4mm
4G LTE and 5G NR FEM

GaAs Chip

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Support Band: 4G/5G NR B42/43/48/77/78Full Power average power tracking (APT) support without DPDHigh Performance APT PA CoreIntegrated TX-RX SRS switch Low leakage current in power-down modeTwo Integrated LNA, filter and switch paths support both primary and MIMO receive within the same moduleSmall, low profile package LGA 5*3mm
GaAs Integrated Amplitude and Phase Control Multifunctional Chip

GaAs Chip

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Single channel+power division receiving/ transmission linear gain: 21dB/ 22dBReceive input P1dB: -15dBmEmission output Psat: 28dBm7-bit phase shifter: 1.0o (RMS)5-bit attenuator: 0.3dB (RMS)Four channel transmission mode: 20V@350mA , 1.8V@400mAFour channel reception mode: 5V@100mA , 1.8V@400mAChip size: 7mm x 7mmMiniaturization
LNA Series 2

GaAs Chip

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Frequency:20-7200MHzNF: 0.6-2 dBGain: 15-37dB bypassPackage: LGA 3*3mm
LNA Series 1

GaAs Chip

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Frequency：0.6-8.5GHzNF: 0.6-1 dBGain: 22-26dBPackage: LGA 2*2mm
0.5-1W GaAs Driver Series

GaAs Chip

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Frequency：0.4-7.4GHzP1db: 27-30dbmGain: 17-38dBPackage: LGA 3*3mm
Phase Shifer Series

GaAs Chip

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Frequency：3.3-3.8/4.8-5GHzPin: 37/40dbm CWIL: 0.4-1.1dBOIP3: 85dbmPackage: LGA 6*4/6*6/7*3.5mm

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